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DISCRETE SEMICONDUCTORS
DATA SHEET
M3D319
PMEG3002AEB Low VF MEGA Schottky barrier diode
Product specification 2002 May 06
Philips Semiconductors
Product specification
Low VF MEGA Schottky barrier diode
FEATURES * Forward current: 0.2 A * Reverse voltage: 30 V * Very low forward voltage * Ultra small SMD package. APPLICATIONS * Ultra high-speed switching * High efficiency DC/DC conversion * Voltage clamping * Inverse-polarity protection * Low voltage rectification * Low power consumption applications. DESCRIPTION Planar Maximum Efficiency General Application (MEGA) Schottky barrier diode with an integrated guard ring for stress protection, encapsulated in a SOD523 (SC-79) ultra small SMD plastic package.
4 columns
PMEG3002AEB
PINNING PIN 1 2 DESCRIPTION cathode anode
1
2
MGU328
Marking code: B1. The marking bar indicates the cathode.
Fig.1
Simplified outline (SOD523; SC-79) and symbol.
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VR IF IFRM IFSM Tstg Tj Tamb PARAMETER continuous reverse voltage continuous forward current repetitive peak forward current non-repetitive peak forward current storage temperature junction temperature operating ambient temperature tp 1 s; 0.5 tp = 8.3 ms half sinewave; JEDEC method CONDITIONS - - - - -65 - -65 MIN. MAX. 30 200 300 1 +150 125 +125 V mA mA A C C C UNIT
2002 May 06
2
Philips Semiconductors
Product specification
Low VF MEGA Schottky barrier diode
ELECTRICAL CHARACTERISTICS Tamb = 25 C; unless otherwise specified. SYMBOL VF PARAMETER continuous forward voltage CONDITIONS see Fig.2 IF = 0.1 mA IF = 1 mA IF = 10 mA IF = 100 mA IF = 200 mA IR Cd Note 1. Pulsed test: tp = 300 s; = 0.02. THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1. Refer to SOD523 (SC-79) standard mounting conditions. PARAMETER thermal resistance from junction to ambient note 1 CONDITIONS continuous reverse current diode capacitance VR = 10 V; see Fig.3; note 1
PMEG3002AEB
TYP. 130 190 255 355 420 2.5
MAX. 190 250 300 400 480 10 25
UNIT mV mV mV mV mV A pF
VR = 1 V; f = 1 MHz; see Fig.4 20
VALUE 450
UNIT K/W
2002 May 06
3
Philips Semiconductors
Product specification
Low VF MEGA Schottky barrier diode
GRAPHICAL DATA
PMEG3002AEB
104 handbook, halfpage IF (mA) 103
MHC187
104 handbook, halfpage IR (A)
(1)
MHC188
103
(2)
102
102
(1)
(2)
(3)
10
10
(3)
1
0
0.2
0.4
0.6
0.8 VF (V)
1
1
0
10
20
VR (V)
30
(1) Tamb = 125 C. (2) Tamb = 85 C. (3) Tamb = 25 C.
(1) Tamb = 125 C. (2) Tamb = 85 C. (3) Tamb = 25 C.
Fig.2
Forward current as a function of forward voltage; typical values.
Fig.3
Reverse current as a function of reverse voltage; typical values.
handbook, halfpage
40
MHC189
Cd 35 (pF) 30 25 20 15 10 5 0 0 10 20 VR (V) 30
f = 1 MHz; Tamb = 25 C.
Fig.4
Diode capacitance as a function of reverse voltage; typical values.
2002 May 06
4
Philips Semiconductors
Product specification
Low VF MEGA Schottky barrier diode
PACKAGE OUTLINE Plastic surface mounted package; 2 leads
PMEG3002AEB
SOD523
A c HE vMA
D
A
0
0.5 scale
1 mm
1 E bp
2
DIMENSIONS (mm are the original dimensions) UNIT mm A 0.7 0.5 bp 0.35 0.25 c 0.2 0.1 D 1.3 1.1 E 0.9 0.7 HE 1.7 1.5 v 0.15
(1)
Note 1. The marking bar indicates the cathode. OUTLINE VERSION SOD523 REFERENCES IEC JEDEC EIAJ SC-79 EUROPEAN PROJECTION ISSUE DATE 98-11-25
2002 May 06
5
Philips Semiconductors
Product specification
Low VF MEGA Schottky barrier diode
DATA SHEET STATUS DATA SHEET STATUS(1) Objective data PRODUCT STATUS(2) Development DEFINITIONS
PMEG3002AEB
This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Changes will be communicated according to the Customer Product/Process Change Notification (CPCN) procedure SNW-SQ-650A.
Preliminary data
Qualification
Product data
Production
Notes 1. Please consult the most recently issued data sheet before initiating or completing a design. 2. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. DEFINITIONS Short-form specification The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. DISCLAIMERS Life support applications These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes Philips Semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified.
2002 May 06
6
Philips Semiconductors
Product specification
Low VF MEGA Schottky barrier diode
NOTES
PMEG3002AEB
2002 May 06
7
Philips Semiconductors - a worldwide company
Contact information For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825 For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com.
(c) Koninklijke Philips Electronics N.V. 2002
SCA74
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
613514/01/pp8
Date of release: 2002
May 06
Document order number:
9397 750 09622

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